Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2007-09-18
2007-09-18
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257SE21564
Reexamination Certificate
active
10925715
ABSTRACT:
A method of depositing dielectric material into sub-micron spaces and resultant structures is provided. After a trench is etched in the surface of a wafer, a silicon nitride barrier is deposited into the trench. The silicon nitride layer has a high nitrogen content near the trench walls to protect the walls. The silicon nitride layer further from the trench walls has a low nitrogen content and a high silicon content, to allow improved adhesion. The trench is then filled with a spin-on precursor. A densification or reaction process is then applied to convert the spin-on material into an insulator. The resulting trench has a well-adhered insulator which helps the insulating properties of the trench.
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Advertisement entitled “Polysilazane SODs Spinfil™ 400 Series for STI/PMD Application.”
Beaman Kevin L.
Patraw Robert D.
Smythe, III John A.
Trivedi Jigish D.
Baumeister B. William
Knobbe Martens Olson & Bear LLP
Micro)n Technology, Inc.
Movva Amar
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