Linearized varactor frequency modulated semi-conductor diode osc

Modulators – Amplitude modulator – Nonlinear device controlled by modulating signal

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331 96, 331107G, 331177V, H03C 322

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active

039822117

ABSTRACT:
The present invention relates to a frequency modulated oscillator, preferably operating within the microwave range, comprising a resonator having a reversed biased semi-conductor element, for example, a Gunn diode and voltage dependent capacitor, for example a varactor diode acting as a frequency modulator and being connected to a modulating signal source. In order to linearize the modulation characteristic, there is a resonant circuit in the resonator which circuit is tuned to the first harmonic 2fo of the unmodulated fundamental frequency fo of the oscillator. When modulating the varactor diode the resonant circuit becomes detuned and the voltage across the Gunn diode is changed so that its capacitance is also changed to change the fundamental frequency fo which compensates the non-linear change in the modulation characteristic of the varactor diode.

REFERENCES:
patent: 3711792 (1973-01-01), Kaneko et al.
patent: 3747032 (1973-07-01), Hall et al.
patent: 3820039 (1974-06-01), Farrer

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