Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1995-06-01
1997-10-07
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257222, 257230, 257232, 257234, H01L 27148, H01L 2968
Patent
active
056751583
ABSTRACT:
A linear solid state imaging device including a substrate (21), a first well (22) of a predetermined junction depth, a second well (23) of a deeper junction than the first well (22), a trapezoid type photodiode area (24) linearly arranged in the first well (22) in which except for one side of the parallel sides of the trapezoid area, the other sides are surrounded by a channel stop area (31), a pair of HCCD areas (25) in the second well in areas of both sides of the photodiode (24) and connected to the output amplifier, a shift gate (28) formed in the substrate between the areas for the photodiode (24) and the HCCD and for transferring the accumulated charges in the photodiode area to the HCCD area, a shift gate channel area (26) formed, in the first well underneath the shift gate (28) and having a six-sided shape one side of which is in contact with the photodiode area (24), another side of which has a V-shaped depression and the other sides are surrounded by a channel stop area (31), a potential barrier formation area (27) formed near the top surface of the photodiode area, a poly gate (29) disposed over the substrate in which HCCD area is formed to output the transferred charges from the photodiode to the output amplifier, an insulating layer (30) formed between the shift gate and the poly gate, and the channel stop area isolates the photodiode cells from each other by means of a potential barrier.
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patent: 4527182 (1985-07-01), Ishihara et al.
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patent: 5196719 (1993-03-01), Miwada
patent: 5235196 (1993-08-01), Anagnostopoulos et al.
patent: 5365093 (1994-11-01), Kuno
Abraham Fetsum
Fahmy Wael
LG Semicon Co. Ltd.
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