Linear RF power amplifier

Details Linear RF power amplifier Linear RF power amplifier

1997-02-14

1998-03-10

Mottola, Steven

Amplifiers

With semiconductor amplifying device

Including push-pull amplifier

330276, H03F 326

Patent

active

057266034

ABSTRACT:
A linear RF power amplifier employs push-pull pairs of high voltage mosfets. A minimum of transformers is employed, with an impedance matching transformer feeding an input balun supplying the input signal in push-pull to the gates of the mosfets. The drains are coupled to balanced legs of an output balun, followed by an output impedance matching transformer. Thermal sensors are employed for control of gate bias and also for control of drain voltage. The temperature sensors are mounted in the air inlet path and on the spreader plate of the heat sink. An aluminum or fiberglass strap is used to press the transistors against the spreader plate thereby ensuring good thermal contact with the transistor dies.

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