Linear resistance element for LSI circuitry

Details Linear resistance element for LSI circuitry Linear resistance element for LSI circuitry

1975-12-17

1977-01-04

Heyman, John S.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

357 51, H01L 2702, H01L 2966

Patent

active

040016129

ABSTRACT:
This invention features the use of two paralleled insulated gate depletion channel field effect transistors (FET) having their gates connected one to the source voltage and one to the drain voltage to provide a linear resistance element. The actual resistance value can be controlled by selecting design parameters and can be extended by using a plurality of such elements in series to provide greater resistances and/or higher voltage capabilities or in parallel to provide greater current capacity. The described resistor is used as a cost and space saving alternate to discrete resistor components and is particularly useful as a part of an integrated circuit in analog type devices.

REFERENCES:
patent: 3700981 (1972-10-01), Masuhara et al.
patent: 3829888 (1974-08-01), Hashimoto et al.
Lehman et al., "Fabrication of Field Effect Transistors;" IBM Tech. Discl. Bull.; vol. 8, No. 4, pp. 677-678; 9/1965.

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