1981-02-13
1984-10-02
Clawson, Jr., Joseph E.
357 51, 357 90, H01L 2992
Patent
active
044751176
ABSTRACT:
A capacitance diode has a substrate of a first conductivity type, an epitaxial layer of the first conductivity type present thereon, a first zone of the first conductivity type diffused therein and a second surface zone of the second opposite conductivity type over said first zone and forming a p-n junction with the first zone. According to the invention, the doping profile in the first zone varies substantially according to the equation N(x)=N.sub.o e.sup.-.beta.x +N.sub.E, where N.sub.o is the doping concentration of the first zone at the p-n junction, N is the doping concentration of the epitaxial layer, and x is the distance from the p-n junction, and where N.sub.o <24 N.sub.E. As a result, a small frequency deviation is obtained, and this frequency deviation does not change sign.
Biren Steven R.
Clawson Jr. Joseph E.
Mayer Robert T.
U.S. Philips Corporation
LandOfFree
Linear pn junction capacitance diode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Linear pn junction capacitance diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Linear pn junction capacitance diode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-528678