Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1998-02-20
2000-06-27
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257656, H01L 31075, H01L 31105, H01L 31117
Patent
active
060810203
ABSTRACT:
An improved PIN photodiode provides enhanced linearity by confining the light absorption region of the diode wholly within the depletion region. The photodiode exhibits improved linearity over prior art designs because the thickness of the absorption region is no longer a function of changes in the size of the depletion region during device operation. Keeping the absorption region wholly within the depletion region ensures that the charge carriers generated by incident illumination will increase the conductivity of the semiconductor material.
REFERENCES:
patent: 5061977 (1991-10-01), Funaba
patent: 5594237 (1997-01-01), Kulick
patent: 5596186 (1997-01-01), Kobayashi
Frahm Robert Eugene
Lee Keon M.
Lorimor Orval George
Zolnowski Dennis Ronald
Bartholomew Steven
Gurey Stephen M.
Hardy David
Lucent Technologies - Inc.
Wilson Allan
LandOfFree
Linear PIN photodiode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Linear PIN photodiode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Linear PIN photodiode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1786637