Linear magnetoresistance-effect sensor with semiconductor and fe

Details Linear magnetoresistance-effect sensor with semiconductor and fe Linear magnetoresistance-effect sensor with semiconductor and fe

1988-01-15

1989-05-02

Strecker, Gerard R.

Electricity: measuring and testing

Magnetic

Magnetometers

235450, 324260, 338 32R, 357 27, 360113, 427128, 437 2, G01R 3306, H01L 4300, H01L 2722, G06K 708

Patent

active

048272183

ABSTRACT:
A magnetoresistance-effect sensor for use in a magnetic domain detector for reading data recorded on magnetic tapes or in magnetic bubble memories mainly consists of a layer of semiconductor material which carries a layer of ferrimagnetic material on one face and at least one pair of electrodes disposed along an axis OX on the other face, the layer of ferrimagnetic material being placed in proximity to the magnetic data carrier. A magnetic data item thus induces a magnetic field in the layer of semiconductor material in a direction OY perpendicular to the axis OX of the pair of electrodes.

REFERENCES:
patent: 3607390 (1971-09-01), Comstock et al.
patent: 3731123 (1973-05-01), Matsushita
patent: 3848217 (1974-11-01), Lazzari
patent: 3898359 (1975-08-01), Nadkarni
patent: 3909710 (1975-09-01), Newburgh et al.
patent: 3943481 (1976-03-01), Masuda et al.
patent: 4021767 (1977-05-01), Nonaka et al.
patent: 4046618 (1977-09-01), Chaudhari et al.
patent: 4057458 (1977-11-01), Maeda et al.
patent: 4097802 (1978-06-01), Mahopac
patent: 4147584 (1979-04-01), Garrison et al.
patent: 4398342 (1983-08-01), Pitt et al.
patent: 4565584 (1986-01-01), Tamura et al.
patent: 4587509 (1986-05-01), Pitt et al.
patent: 4607271 (1986-08-01), Popovic et al.
patent: 4624901 (1986-11-01), Glass
Patent Abstracts of Japan, vol. 7, No. 292 (E-219) [1437], Dec. 27, 1983, "Magnetoelectricity Converting Element", 58-166781, Pioneer K. K. et al.
Thin Solid Films, vol. 100, No. 2, Feb. 1983, pp. 81-109, Elsevier Sequoia, Lasusanne, "Magnetoresistance in Amorphous Semiconductors", R. M. Mehra et al.

Affiliated with

Also associated with

Rating

Linear magnetoresistance-effect sensor with semiconductor and fe does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Linear magnetoresistance-effect sensor with semiconductor and fe, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Linear magnetoresistance-effect sensor with semiconductor and fe will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-587856