Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1992-06-29
1993-06-15
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257459, 257692, 257786, H01L 2714, H01L 2348
Patent
active
052202100
ABSTRACT:
In a linear image sensor, a circuit region including a number of photosensitive elements is provided at a center zone of the chip in a longitudinal direction of an elongated semiconductor chip. Two groups of bonding pads are locally concentrated in opposite end zones of the elongated chip, respectively. A plurality of bonding stitches formed on a package for supporting the substrate are divided into two arrays which include substantially the same number of bonding stitches and which are located at both sides of the substrate. Thus, an empty area in the chip can be made as small as possible, and therefore, the chip size can be minimized.
NEC Corporation
Prenty Mark V.
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