Linear field effect transistor

Details Linear field effect transistor Linear field effect transistor

1993-07-19

1994-09-27

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257472, 257475, H01L 2980

Patent

active

053509366

ABSTRACT:
In one form of the invention, a field effect transistor is disclosed, the transistor comprising: a channel between a source and a drain, the channel comprising: a first region 22 of a first semiconductor material having a first doping concentration; a second region 20 of a second semiconductor material having a second doping concentration, the second region 20 lying above the first region 22; a third region 18 of the first semiconductor material having a third doping concentration, the third region lying above the second region 20, wherein the first doping concentration is higher than the second and third doping concentrations; and a gate electrode 12 lying above the third region 18, whereby an electrical current flows in the channel primarily in the first region 22 or primarily in the second region 20 by varying a voltage on the gate electrode 12.

REFERENCES:
patent: 5151757 (1992-09-01), Enoki et al.
R. E. Williams, et al., "Graded Channel FET's": Improved Linearity and Noise Figure, IEEE Transactions on Electron Devices, vol. Ed-25, No. 6, Jun. 1978, pp. 600-605.
S. L. G. Chu, et al., "A Highly Linear MESFET," IEEE MTT-S Digest, 1991, pp. 725-728.
P. K. Ikalainen, et al., "Low-Noise, Low DC Power Linear FET," European Microwave Conference Proceedings, Aug. 1992, pp. 570-575.
P. K. Ikalainen, et al., "High Dynamic Range Microwave FET," Electronics Letters, vol. 27, No. 11, May 23, 1991, pp. 945-946.

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