Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1997-01-17
1999-02-09
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257221, 257234, 257248, H01L 27148, H01L 29768
Patent
active
058698531
ABSTRACT:
A linear CCD (charge-coupled device) including: a photodiode-array having a plurality of photodiodes for converting incident light plural charges, respectively; and a charge transfer part for transferring the charges of the photodiodes during a first phase of a first and second clock signal and for moving the charges during a second phase of the first and second clock signals. The charge transfer part includes: plural first shift electrodes connected to the photodiodes, respectively, for forming potential wells that receive charges from the photodiodes, respectively, during the first phase of the first and second clock signals; and plural second shift electrodes located between the first shift electrodes, respectively, for forming potential wells that receive the charges from the potential wells of the first shift electrodes during the second phase of the first and second clock signals. No shift gates are needed between charge outlets of the photodiodes and the first shift electrodes.
REFERENCES:
patent: 4117514 (1978-09-01), Terui et al.
patent: 4174528 (1979-11-01), White
patent: 4489423 (1984-12-01), Suzuki
patent: 4518978 (1985-05-01), Takeshiba
patent: 4935794 (1990-06-01), Miyatake
patent: 5060038 (1991-10-01), Kimata et al.
patent: 5521405 (1996-05-01), Nakashiba
LG Semicon Co. Ltd.
Munson Gene M.
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