Line profile asymmetry measurement

Optics: measuring and testing – Shape or surface configuration

Reexamination Certificate

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C356S636000

Reexamination Certificate

active

07639371

ABSTRACT:
This disclosure provides methods for measuring asymmetry of features, such as lines of a diffraction grating. On implementation provides a method of measuring asymmetries in microelectronic devices by directing light at an array of microelectronic features of a microelectronic device. The light illuminates a portion of the array that encompasses the entire length and width of a plurality of the microelectronic features. Light scattered back from the array is detected. One or more characteristics of the back-scattered light may be examined by examining data from the complementary angles of reflection. This can be particularly useful for arrays of small periodic structures for which standard modeling techniques would be impractically complex or take inordinate time.

REFERENCES:
patent: 4408884 (1983-10-01), Kleinknecht et al.
patent: 4710642 (1987-12-01), McNeil
patent: 4933567 (1990-06-01), Silva et al.
patent: 4978862 (1990-12-01), Silva et al.
patent: 5114233 (1992-05-01), Clark et al.
patent: 5144150 (1992-09-01), Yoshizumi et al.
patent: 5241369 (1993-08-01), McNeil et al.
patent: 5313542 (1994-05-01), Castonguay
patent: 5475617 (1995-12-01), Castonguay
patent: 5637873 (1997-06-01), Davis et al.
patent: 5640246 (1997-06-01), Castonguay
patent: 5682466 (1997-10-01), Maeda et al.
patent: 5703692 (1997-12-01), McNeil et al.
patent: 5739909 (1998-04-01), Blayo et al.
patent: 5864394 (1999-01-01), Jordan, III et al.
patent: 5867276 (1999-02-01), McNeil et al.
patent: 5889593 (1999-03-01), Bareket
patent: 5905573 (1999-05-01), Stallard et al.
patent: 5912741 (1999-06-01), Carter et al.
patent: 5963329 (1999-10-01), Conrad et al.
patent: 5982489 (1999-11-01), Shiraishi
patent: 6075594 (2000-06-01), Thomas et al.
patent: 6212010 (2001-04-01), Iizuka et al.
patent: 6292259 (2001-09-01), Fossey et al.
patent: 6292265 (2001-09-01), Finarov et al.
patent: 6538731 (2003-03-01), Niu et al.
patent: 6650422 (2003-11-01), Singh et al.
patent: 6778273 (2004-08-01), Norton et al.
patent: 6819426 (2004-11-01), Sezginer et al.
patent: 6856408 (2005-02-01), Raymond
patent: 7042569 (2006-05-01), Sezginer et al.
patent: 7119893 (2006-10-01), Littau et al.
patent: 2002/0035455 (2002-03-01), Niu et al.
patent: 2002/0038196 (2002-03-01), Johnson et al.
patent: 2002/0046008 (2002-04-01), Krukar et al.
patent: 2002/0112966 (2002-08-01), Martyak et al.
patent: 2002/0131040 (2002-09-01), Niu et al.
patent: 2002/0131055 (2002-09-01), Niu et al.
patent: 2002/0135781 (2002-09-01), Singh et al.
patent: 2002/0135783 (2002-09-01), Opsal et al.
patent: 2002/0135875 (2002-09-01), Niu et al.
patent: 2002/0149782 (2002-10-01), Raymond
patent: 2002/0158193 (2002-10-01), Sezginer et al.
patent: 2002/0165636 (2002-11-01), Hasan
patent: 2002/0182760 (2002-12-01), Wack et al.
patent: 2003/0002043 (2003-01-01), Abdulhalim et al.
patent: 2003/0042579 (2003-03-01), Schulz
patent: 2003/0043372 (2003-03-01), Schulz
patent: 2003/0044702 (2003-03-01), Schulz
patent: 2003/0143761 (2003-07-01), Fukuda
patent: 2006/0132807 (2006-06-01), Abdulhalim et al.
patent: 2006/0262326 (2006-11-01), Abdulhalim et al.
patent: 2009/0161123 (2009-06-01), Finarov et al.
patent: 03-255907 (1991-11-01), None
patent: 03-255907 (1991-11-01), None
patent: 06-317412 (1994-11-01), None
patent: 2001-074636 (2001-03-01), None
patent: WO-00/00817 (2000-01-01), None
patent: WO 02/50501 (2002-06-01), None
patent: WO-02/065545 (2002-08-01), None
patent: WO-02/065545 (2002-08-01), None
patent: WO-02/069390 (2002-09-01), None
patent: WO-02/069390 (2002-09-01), None
patent: WO-02/070985 (2002-09-01), None
patent: WO-02/077570 (2002-10-01), None
patent: WO-2005/028992 (2005-03-01), None
patent: WO-2005/028992 (2005-03-01), None
Baum, C.C. et al. (Mar. 1999). “Scatterometry for post-etch polysilicon gate metrology,” Part of the SPIE Conference on Metrology, Inspection, and Process Control for Microlithography XIII, Santa Clara, California.Proc. SPIE3677:148-158.
Bischoff, J. et al. (1998). “Optical scatterometry of quarter micron patterns using neural regression,”Proc SPIE3332:526-537.
Bischoff, J. et al. (Aug. 2001). “Light diffraction based overlay measurement,” Metrology, Inspection and Process Control for Microlithography XV,Proc. SPIE4344:222-233.
Bushman, S. et al. (1997). “Scatterometry Measurements for Process Monitoring of Polysilicon Gate Etch,” Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III,Proc. SPIE3213:79-90.
Davidson, M.P. et al. (Mar. 1999). “An inverse scattering approach to SEM line width measurements,” Part of the SPIE Conference on Metrology, Inspection, and Process Control for Microlithography XIII, Santa Clara, California.Proc. SPIE3677:640-649.
Ding, P. et al, (Oct. 23, 2000). “Light Scattering Study of Roughness and Dishing on Post-CMP Wafers,”Abstract from Fourth International Symposium on Chemical Mechanical Polishing(CMP), 198thMeeting: Phoenix, Arizona. 18 pages.
International Search Report mailed on Jul. 20, 2005 for PCT Application No. PCT/US2004/030115 filed on Sep. 13, 2004, two pages.
International Search Report mailed on Jun. 27, 2002 for PCT Application No, PCT/US02/06403 filed on Feb. 28, 2002, one page.
Kallioniemi, I.J. et al. (May 1999). “Optical Scatterometry with neural network model for nondestructive measurement of submicron features,” Part of the EUROPTO Conference on In-line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing, Edinburgh, Scotland.Proc SPIE3743:33-40.
Krukar, R.H. et al. (1992). “Novel diffraction techniques for metrology of etched silicon gratings,” Optical Society of America, Washington, D.C.,OSA Annual Meeting Technical Digest23:204.
Krukar, R.H. et al. (1992). “Wafer examination and critical dimension estimation using scattered light,” Machine Vision Applications in Character Recognition and Industrial Inspection, D'Amato et al. eds.,Proc. SPIE1661:323-332.
Mohararn, M.G. et al. (May 1995). “Formulation for stable and efficient implementation of the rigorous coupled-wave analysis of binary gratings,”J. Opt. Soc. Amer. A.12(5):1068-1076.
NMRC Scientific Reports, (1999). “Laser Scatterometry,” located at <http://www.nmrc.ie/reports/1999/scientific/sciphoto.html>last updated Aug. 18, 2006.Photonics, pp. 1-11.
Raymond, C.J. et al. (1997). “Resist and etched line profile characterization using scatterometry,”Integrated Circuit Metrology, Inspection, and Process Control XI, Proc. SPIE3050:476-486.
Raymond, C.J. et al. (2000). “Scatterometry for the measurement of metal features,” Metrology, Inspection, and Process Control for Microlithography XIV,Proc. SPIE3998:135-146.
Sohail, S. et al. (Nov./Dec. 1994). “Diffractive techniques for lithographic process monitoring and control”,J. Vac. Sci. TechnoL B12(6):3600-3606.
Supplementary European Search Report mailed on Feb. 15, 2007 for EP Application No. 02 70 9756.7, three pages.
CN First Office Action mailed on Feb. 25, 2005 for Application No. 02805890.9 filed on Feb. 28, 2002, English translation included, twelve pages.
CN Second Office Action mailed on Nov. 4, 2005 for Application No. 02805890.9 filed on Feb. 28, 2002, English translation included, six pages.
CN First Office Action mailed on Jul. 6, 2007 for Application No. 200480033229.X filed on Sep. 13, 2004, thirteen pages.
Preliminary Amendment mailed on Jun. 3, 2003 for U.S. Application No. 10/086,339 filed on Feb. 28, 2002, ten pages.
Office Action mailed on Dec. 22, 2003 for U.S. Application No. 10/086,339 filed on Feb. 28, 2002, twelve pages.
Response to Office Action mailed on May 27, 2004 for U.S. Application No. 10/086,339 filed on Feb. 28, 2002, thirteen pages.
Notice of Allowance mailed on Jun. 21, 2004 for U.S. Application No. 10/086,339 filed on Feb. 28, 2002, four pages.
European Search Report mailed on Jun. 26, 2008 for European Patent Application No. 04784089.7 filed on Sep. 13, 2004 by Accent Optical T

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