Line material, electronic device using the line material and liq

Details Line material, electronic device using the line material and liq Line material, electronic device using the line material and liq

1993-07-22

1995-06-27

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257 59, 257762, 257766, 359 87, H01L 2348

Patent

active

054282500

ABSTRACT:
The line material is of a laminated structure consisting of: a Ta containing N alloy layer (lower layer) which is a first metal layer made of at least an alloy selected from the group consisting of a TaN alloy, a Ta--Mo--N alloy, a Ta--Nb--N alloy and a Ta--W--N alloy; a second metal layer (upper layer) formed integrally with the first metal layer and made of at least an alloy selected from the group consisting of Ta, a Ta--Mo alloy, a Ta--Nb alloy, a Ta--W alloy, a TaN alloy, a Ta--Mo--N alloy, a Ta--Nb--N alloy and a Ta--W--N alloy; and/or a pin hole-free oxide film. The line material of the laminated structure is to be applied to the formation of signal lines and electrodes of, e.g., a liquid crystal display. The line material has a low resistance and the insulating film formed by anodization and the like exhibits excellent insulation and thermal stability. Therefore, when the line material is applied to signal lines of various devices, it exhibits excellent characteristics.

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