Line-addressable random-access memory

Communications: electrical – Digital comparator systems

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340173DR, G11C 2100, G11C 700, G11C 1928

Patent

active

040245128

ABSTRACT:
A line-addressable random-access memory (LARAM) comprises a plurality of lines of charge storage elements, means for introducing charge representing binary information to the beginning of particular ones of the plurality of lines of charge storage elements which are addressed, at least one data clock signal means for effecting the transfer of charge along those lines of the charge storage elements which are addressed, an address-selection matrix electrically coupled between the clock signal means and the lines to permit the addressed ones of the lines to be clocked, and charge-sensor means for receiving charge from the addressed lines and, in response thereto, generating a signal which represents the data signified by the charge and for recirculating a refreshed representation of the charge to the means for introducing charge.

REFERENCES:
patent: 3859640 (1975-01-01), Eberlein et al.
patent: 3889245 (1975-06-01), Gosney
Kosonocky, Two-Phase Charge-Coupled Devices, RCA Technical Notes, TH No. 931, Apr. 26, 1973.
Amelio, Charge-Coupled Devices, Scientific American, vol. 230, No. 2, Feb. 1974, pp. 23-31.

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