Limiting shoot-through current in a power MOSFET half-bridge dur

Details Limiting shoot-through current in a power MOSFET half-bridge dur Limiting shoot-through current in a power MOSFET half-bridge dur

1987-07-17

1989-06-20

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

3072965, 307572, 307270, 307491, H03K 19094, G05F 146

Patent

active

048411663

ABSTRACT:
A novel closed loop feedback circuit is provided which senses the shoot-through current of a power switching device driving an inductive load. If excessive shoot-through current is sensed, the closed loop causes a reduction of the gate drive to the Power MOSFET contained in the power switching circuit, thereby slowing its turn on time, and in turn reducing the shoot-through current.

REFERENCES:
patent: 4347445 (1982-08-01), Baker
patent: 4449064 (1984-05-01), Eckert et al.
patent: 4667144 (1987-05-01), Jones et al.
MOSPOWER Applications Handbook, particularly Chapter 5.4 entitled "dV.sub.DS/dt Turn-On in MOSFETs (TA84-4)", (pp. 5-7 through 5-64) and Chapter 5.5 entitled Inverse Diodes of Power MOSFETs (pp. 5-65 through 5-68).

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