Limiter circuit having a field effect transistor

Details Limiter circuit having a field effect transistor Limiter circuit having a field effect transistor

1991-03-13

1992-08-04

LaRoche, Eugene R.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307264, 328171, 328172, 328173, 333 172, H03G 1104, H04B 304

Patent

active

051361930

ABSTRACT:
A limiter circuit having a field effect transistor whose bias circuit is constituted by two constant voltage feeds: one for its gate and the other for its drain, with a resistive load being connected in series with the feed to the gate of the transistor. The invention is particularly applicable to space telecommunications.

REFERENCES:
patent: 4162412 (1979-07-01), Mawhinney et al.
patent: 4167681 (1979-09-01), Wolkstein et al.
NEC Research and Development, vol. 48, No. 1, 1978, Tokyo, Japan, pp. 61-65; S. Fukuda et al.: "A New Microwave Amplitude Limiter Using GaAs Field Effect Transistors."
1985 IEEE-MTT-S International Microwave Symposium Digest, Jun. 4-6, 1985, New York, USA; pp. 613-616; B. R. Hallford: "30 dB of AGC from an FET".

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