Limited current density field effect transistor with buried sour

Details Limited current density field effect transistor with buried sour Limited current density field effect transistor with buried sour

1994-08-11

1995-09-05

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, 257 29, 257401, H01L 27085, H01L 2944, H01L 29784

Patent

active

054480850

ABSTRACT:
A buried source and drain microwave field effect transistor which provides reduced current density and reduced electric field intensity near the transistor's surface region is disclosed. Operating life and reliability of the transistor are improved by the buried source and drain structure which locates necessary regions of high electrical field intensity and large current density well within the body of the transistor. Comparisons of the buried source and drain field effect transistor with the conventional metal semiconductor field effect transistor are disclosed and include current density, electric field intensity, voltage potentials and I-V curve comparisons. A salient steps fabrication sequence for the buried source and drain field effect transistor is also disclosed.

REFERENCES:
patent: 4769338 (1988-09-01), Ovshinsky et al.
patent: 4782032 (1988-11-01), Geissberger et al.
patent: 4786610 (1988-11-01), Blossfeld
patent: 4843024 (1989-06-01), Ito
patent: 4868135 (1989-09-01), Ogura et al.
patent: 4956308 (1990-09-01), Griffin et al.
patent: 4962054 (1990-10-01), Shikata
patent: 4963501 (1990-10-01), Ryan et al.
patent: 5021361 (1991-06-01), Kinoshita et al.
patent: 5086321 (1992-02-01), Batey et al.
patent: 5101245 (1992-03-01), Shimura

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