Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2006-06-05
2010-10-26
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257SE33061, C977S762000
Reexamination Certificate
active
07821022
ABSTRACT:
Disclosed is a light emitting device employing nanowire phosphors. The light emitting device comprises a light emitting diode for emitting light having a first wavelength with a main peak in an ultraviolet, blue or green wavelength range; and nanowire phosphors for converting at least a portion of light having the first wavelength emitted from the light emitting diode into light with a second wavelength longer than the first wavelength. Accordingly, since the nanowire phosphors are employed, it is possible to reduce manufacturing costs of the light emitting device and to reduce light loss due to non-radiative recombination.
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Taiwanese Office Action dated Sep. 19, 2008.
Hwa-Mok Kim et al., InGaN nanorods gown on (111) silicon substrate by hydride vapor phase epitaxy, Chemical Physics Letters, Sep. 26, 2003, pp. 181-184, vol. 380.
H.C. Park & Associates PLC
Laurenzi, III Mark A
Pham Thanh V
Seoul Opto Device Co., Ltd.
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