Light-writing-type liquid crystal element having a photoconducto

Details Light-writing-type liquid crystal element having a photoconducto Light-writing-type liquid crystal element having a photoconducto

1996-01-18

1997-12-02

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 72, 349 25, 349 26, 349 27, H01L 2904, H01L 31036

Patent

active

056939582

ABSTRACT:
A light-writing-type liquid crystal element which is provided with carrier-blocking layers that are installed on the transparent electrode side and on the light-shielding layer side of a photoconductive layer and that prevents carriers from entering the photoconductive layer. By adjusting the width of a depletion layer that is formed by the carrier-blocking layers and other factors, the energy-band structure of the photoconductive layer is kept asymmetric so that when a voltage is applied onto the photoconductive layer, the area on the writing-light incident-side of the photoconductive layer receives a higher voltage than that of the area on the liquid-crystal-layer side. Consequently, the photosensitivity of the photoconductive layer is improved, and the resolution as well as the contrast of the element can be improved.

REFERENCES:
patent: 4314014 (1982-02-01), Yamamoto et al.

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