Light trigger type semiconductor device with reflection preventi

Details Light trigger type semiconductor device with reflection preventi Light trigger type semiconductor device with reflection preventi

1995-03-21

1997-01-21

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

257 99, 257116, 257117, 257432, 257434, 257437, 385 49, H01L 310232

Patent

active

055962106

ABSTRACT:
An object of the present invention is to enhance the transmission efficiency of light signals. An output end of a light guide is coupled to a light receiving portion of a semiconductor substrate with an optical coupling agent. Reflection preventing films of silicon dioxide are formed on both the output end and the input end of the light guide. Similar reflection preventing films are formed on both surfaces of a light introducing window provided at the input end of the light guide, too. The light introducing window is provided to maintain the inside of the device airtight while enabling passage of light signals. Since the reflection preventing films are formed, the transmission efficiency of light signals is high, so that the sensitivity of the device increases.

REFERENCES:
patent: 4790620 (1988-12-01), Niwayama
Patent Abstracts of Japan, Unexamined Applications, E Field, Vol. 9, No. 169 (E-328) (1892),
Jul. 13, 1985, JP-60-42875, Mar. 7, 1985.

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