Light transparent superlattice window layer for light emitting d

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

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257 13, 257 15, 257 22, 257 79, 257 94, 257 96, 257103, 257613, 257615, H01L 3300

Patent

active

060575638

ABSTRACT:
Disclosed is a light transparent window layer for light transmitting diodes. The light transparent window layer is formed by growing a plurality of AlGaInP superlattice layers such that the uniformity of current distribution within LED chip can be enhanced, and the size of light-emitting area can be increased. The manufacturing process is also simplified.

REFERENCES:
patent: 5989339 (1999-11-01), Tamamura et al.

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