Light transmittance optimizing coated glass article for...

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Reexamination Certificate

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C428S336000, C428S701000, C428S689000, C428S697000, C428S699000, C427S166000, C427S255150, C427S255190, C427S255280, C065S060500

Reexamination Certificate

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07968201

ABSTRACT:
A multi-layer thin film stack, particularly suitable as a component of a solar cell, is deposited on a transparent dielectric substrate. The multi-layer film stack comprises a transparent electrically conductive metal oxide layer deposited over the dielectric substrate, the conductive metal oxide layer having a refractive index less than 2.0, a light transmittance optimizing interlayer having a refractive index between 2.3 and 3.5, deposited over the electrically conductive metal oxide layer, and a silicon layer having a refractive index of at least 4.5 deposited over the light transmittance optimizing interlayer. The film stack can be deposited by any suitable method, but deposition of each of these layers by atmospheric chemical vapor deposition is preferred.

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Natsuhara, H. et al; Hydrogen-radical durability of TiO2thin films for protecting transparent conducting oxide for Si thin film solar cells; Thin Solid Films; Apr. 22, 2003; pp. 253-256; Elsevier Science B.V.; vol. 430, No. 1-2; XP004427564.
Mroz, B. et al; Influence Of Hydrogen On Optical Properties Of LPCVD Amorphous Silicon Films; 26th PVSC, IEEE; Sep. 30/Oct. 3, 1997; pp. 671-673; XP002418332, Anaheim, California.

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