Light-transmissive resin sealed semiconductor

Details Light-transmissive resin sealed semiconductor Light-transmissive resin sealed semiconductor

1995-04-26

1997-11-04

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257787, 257788, 257790, H01L 310203

Patent

active

056843259

ABSTRACT:
A light-transmissive resin sealed semiconductor is provided which is sealed at least at a light incident face of a photoelectric transducer with an organic polymer resin layer, which comprises a copolymer of ethylene and an unsaturated fatty acid ester. This light-transmissive resin sealed semiconductor has a surface layer which has high heat resistance, and low hygroscopicity, and does not liberate a free acid even in the presence of moisture. Thereby the semiconductor is prevented from deterioration of performances caused by the drop of the shunt resistance of the photovoltaic element under high humidity environment.

REFERENCES:
patent: 5389159 (1995-02-01), Kataoka et al.
patent: 5397401 (1995-03-01), Toma et al.

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