Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1994-03-24
1995-03-14
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257448, 257748, 257102, H01L 2348, H01L 2940
Patent
active
053979206
ABSTRACT:
A light transmissive, electrically conductive oxide comprising tin and a Group II element is doped with a Group III element and with one or more of hydrogen or fluorine. The oxide may be deposited by sputtering at a temperature in the range from 25.degree. to 350.degree. C., or by chemical vapor deposition at temperatures in the range from 80.degree. to 400.degree. C.
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Griswold Gary L.
Jackson Jerome
Kagan David B.
Kirn Walter N.
Minnesota Mining and Manufacturing Company
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