Light shield process for solid-state image sensors

Details Light shield process for solid-state image sensors Light shield process for solid-state image sensors

2006-08-15

2006-08-15

Brewster, William M. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S233000, C257S234000, C257S294000, C257S435000

Reexamination Certificate

active

07091532

ABSTRACT:
An image sensor includes a substrate containing photosensitive areas; an insulator spanning the substrate; and a first and second layer of a multi-layer metalization structure wherein the first layer forms the light shield regions over portions of the photosensitive area as well as forming circuit interconnections and barrier regions to prevent spiking into the substrate or gates at contacts in the non-imaging area, and the second layer spanning the interconnections and barrier regions of the first layer only over the non-imaging area.

REFERENCES:
patent: 5028972 (1991-07-01), Watanabe et al.
patent: 5519207 (1996-05-01), Morimoto
patent: 5719075 (1998-02-01), Hawkins et al.
patent: 5846708 (1998-12-01), Hollis et al.
patent: 6114717 (2000-09-01), Uchiya
patent: 2003/0001222 (2003-01-01), Street et al.
patent: 2-156670 (1990-06-01), None
patent: 02156670 (1990-06-01), None

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