Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-07-10
2011-11-08
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S414000, C257SE21511, C257SE23126
Reexamination Certificate
active
08053852
ABSTRACT:
The invention is directed to enhancement of performance of a back surface incident type semiconductor device having a light receiving element and a manufacturing method thereof without increasing a manufacturing cost. A supporting body is attached to a front surface of a semiconductor substrate formed with a light receiving element and its pad electrode. Then, the supporting body is etched to form a via hole penetrating the supporting body and exposing the pad electrode. Then, a wiring connected to the pad electrode and extending onto a front surface of the supporting body through the via hole is formed. Lastly, the semiconductor substrate is separated into a plurality of semiconductor dies by dicing. The semiconductor device is mounted so that the supporting body faces a circuit board.
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Morrison & Foerster / LLP
Semiconductor Components Industries LLC
Vu Hung
Webb Vernon P
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