Light sensor located above an integrated circuit

Details Light sensor located above an integrated circuit Light sensor located above an integrated circuit

2005-12-30

2009-02-17

Sefer, Ahmed (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S290000, C257S291000, C257S431000, C257S458000, C257SE27128

Reexamination Certificate

active

07492026

ABSTRACT:
A light sensor located above an integrated circuit including a lower electrode, a heavily-doped amorphous silicon layer of a first conductivity type, and a lightly-doped amorphous silicon layer of a second conductivity type. The lightly-doped amorphous silicon layer rests on a planar surface at least above and in the vicinity of the lower electrode.

REFERENCES:
patent: 5936261 (1999-08-01), Ma et al.
patent: 6252218 (2001-06-01), Chou
patent: 2001/0013898 (2001-08-01), Bawolek et al.
patent: 2003/0057357 (2003-03-01), Uppal et al.
patent: 2003/0107100 (2003-06-01), Cao et al.
patent: 2003/0213915 (2003-11-01), Chao et al.
patent: 2004/0238911 (2004-12-01), Roy
French Search Report from French Patent Application 04/53264 filed Dec. 30, 2004.

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