Light sensor having good sensitivity to visible light

Details Light sensor having good sensitivity to visible light Light sensor having good sensitivity to visible light

1975-05-22

1977-07-05

Larkins, William D.

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

250211J, 357 16, 357 61, H01L 2714

Patent

active

040343960

ABSTRACT:
A light sensor includes a body of semiconductor material having an energy gap within the range of between 1.65 eV and 2.0 eV and a main surface. A rectifying junction is formed in the body of semiconductor material at a depth of at most 1.5 microns beneath the main surface. The semiconductor material of such a device is preferably selected from a group of materials consisting of Ga As.sub.1.sub.-x P.sub.x with a value of x in the range between 0.20 and 0.52 and Ga.sub.1.sub.-x Al.sub.x As having a value of x in the range between 0.20 and 0.68.

REFERENCES:
patent: 3403284 (1968-09-01), Buck et al.
patent: 3548213 (1970-12-01), Owen et al.
patent: 3560812 (1971-02-01), Hall
patent: 3563817 (1971-02-01), Chang et al.
patent: 3614549 (1971-10-01), Lorenz et al.
patent: 3675026 (1972-07-01), Woodall
patent: 3769558 (1973-10-01), Lindmayer

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