Light sensor

Details Light sensor Light sensor

2008-01-10

2011-10-25

Matthews, Colleen (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257SE27130

Reexamination Certificate

active

08044473

ABSTRACT:
A light sensor includes an intrinsic layer, a first ion doping area disposed one side of the intrinsic layer, a second ion doping area disposed at the other side of the intrinsic layer, an oxide insulating layer on the intrinsic layer, and a gate metal on the oxide insulating layer. The first and second ion doping areas have the same P type or N type doped ions. The intrinsic layer further includes a first light sensing region close to the first ion doping area. The first light sensing region is used for generating electron-hole pairs based on luminance of incident light.

REFERENCES:
patent: 5027177 (1991-06-01), Vasudev
patent: 5488000 (1996-01-01), Zhang et al.
patent: 2004/0043676 (2004-03-01), Tada et al.
patent: 2005/0156261 (2005-07-01), Nishikawa et al.
patent: 2005/0285167 (2005-12-01), Mouli et al.
patent: 2006/0138421 (2006-06-01), Tada

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