Light sensitive semiconductor device and method of operation

Details Light sensitive semiconductor device and method of operation Light sensitive semiconductor device and method of operation

1996-04-30

1998-04-14

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257280, 257453, 257462, H01L 2980

Patent

active

057395616

ABSTRACT:
A light sensitive semiconductor device (10) is formed in a well region (12) in a semiconductor substrate (11). A first voltage (30) is applied to a source region (4) of the semiconductor device (10) and to a contact region (13) to the well region (12) to attract holes. A second voltage (31) is applied to the source region (14) and a drain region (16) to provide a current flow. As photons (23) from a light source are absorbed by semiconductor device (10), the source to drain current is decreased.

REFERENCES:
patent: 5196717 (1993-03-01), Hiroki et al.
patent: 5431883 (1995-07-01), Barraud

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