Light-sensitive film

Stock material or miscellaneous articles – Structurally defined web or sheet – Including components having same physical characteristic in...

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204192P, 204192S, 427 74, 427 93, 427 95, 428336, 428411, 428446, 428450, 428913, 428688, 428698, 136258, B32B 712, B32B 904

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042898226

ABSTRACT:
A photoconductive material comprising an amorphous substance whose indispensable constituent elements are silicon, carbon and hydrogen is disclosed. The photoconductive material preferably has a structure expressed by [Si.sub.1-x C.sub.x ].sub.1-y [H].sub.y where 0.02.ltoreq.x.ltoreq.0.3 and 0.02.ltoreq.y.ltoreq.0.3. Up to 40% of the carbon can be substituted by germanium. The peak of response can be established for light of any desired wavelength between approximately 5,600 A-4,500 A. This photoconductive material is particularly useful when applied to a light-sensitive film which is operated in the storage mode. The light-sensitive film includes the photoconductive material in a region in which pairs of free electrons and positive holes are created upon incidence of light.

REFERENCES:
patent: 3670198 (1972-06-01), Lehovec
patent: 3943218 (1976-03-01), Dietze
patent: 4141764 (1979-02-01), Authier
"Electrical and Optical Properties of Amorphous Silicon Carbide, Silicon Nitride and Germanium Carbide Prepared by Glow Discharge", Philosophical Magazine, vol. 35, pp. 1-16 (1977).
M. Le Contellec, et al., "Effects of the Si/C and the H Content of Amorph. S. C. Thin Films Prepared by Reactive Sputtering", Thin Solid Films, 58 (1979) pp. 407-411.

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