Light sensing device

Radiant energy – Photocells; circuits and apparatus – Optical or pre-photocell system

Patent

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Details

250211J, 357 30, H01J 4014

Patent

active

046330925

ABSTRACT:
A light sensing device comprises a photoconductive layer overlaying an array of PN junction diodes integrated within a semiconductor substrate. When a voltage is applied to the device to reverse bias the diodes, the voltage divides across the device in accordance with the capacitance of capacitive elements formed by the photoconductive layer and the junction capacitance of the diodes. When light impinges on the device, charge transfers from the photoconductive layer and accumulates at the underlying junctions at a rate that is directly dependent on the intensity of light incident on the corresponding portion of the photoconductive layer. When a diode reverse breakdown voltage is reached, the corresponding diode conducts. This causes an increase in current through the device, thereby signaling that a desired localized exposure has been attained.

REFERENCES:
patent: 3064167 (1962-11-01), Hoerni
patent: 3434015 (1969-03-01), Kilby
patent: 3772517 (1973-11-01), Smith
patent: 3945732 (1976-03-01), Nobusawa
patent: 4271420 (1981-06-01), Chikamura et al.
patent: 4285583 (1981-08-01), Canter
patent: 4407010 (1983-09-01), Baji et al.
patent: 4420773 (1983-12-01), Toyoda et al.

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