1990-03-02
1992-09-01
James, Andrew J.
357 4, 357 16, 357 58, H01L 29161, H01L 29205, H01L 29225
Patent
active
051443970
ABSTRACT:
A light responsive semiconductor device includes a p-i-n structure incorporating a multiple quantum well structure buried within the intrinsic layer and an external resistance and voltage source serially connected across the device for adjusting a critical wavelength at which the light absorption characteristic of the device dramatically changes. By properly choosing the resistance and/or voltage, the photocurrent changes discontinuously at the critical wavelength and the photocurrent exhibits a hysteresis characteristic. A light responsive structure may include individual, serially aligned p-i-n devices or an integrated, unitary semiconductor body inculding a plurality of p-i-n devices.
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Tokuda Yasunori
Tsukada Noriaki
Crane Sara W.
James Andrew J.
Mitsubishi Denki & Kabushiki Kaisha
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