Light responsive heterojunction semiconductor pn element

Details Light responsive heterojunction semiconductor pn element Light responsive heterojunction semiconductor pn element

1988-12-02

1992-06-09

Mintel, William

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

357 16, 357 4, 136255, 136262, 136249, H01L 2714

Patent

active

051211831

ABSTRACT:
A light responsive semiconductor includes a second conductivity type semiconductor substrate, a photoelectric conversion layer comprising semiconductor layers having a pn junction, which is disposed on the second conductivity type semiconductor substrate, a buffer layer comprising a second conductivity type semiconductor layer having a larger energy band gap than that of the photoelectric conversion layer. The element further includes a light reflection layer comprising a semiconductor layer which is disposed between the second conductivity type semiconductor substrate and the buffer layer. Alternatively, a light reflection layer which is a buffer layer is disposed between a photoelectric conversion layer and a semiconductor substrate.

REFERENCES:
patent: 4427841 (1984-01-01), Rahilly
patent: 4547622 (1985-10-01), Fan et al.
Pearah et al., "Optical Reflectance in GaAs/AlGaAs Quantum Wells," J. Appl. Phys. 59(11), Jun. 1, 1986, pp. 3847-3850.
Itoh et al., "14.5% Conversion Efficiency GaAs Solar Cell Fabricated on Si Substrates," Appl. Phys. Lett. 49(23); Dec. 8, 1986, pp. 1614-1616.
van der Zeil et al., "Optical Second Harmonic . . . Structures", Applied Physics Letters, vol. 28, No. 9, Apr. 15, 1976.
Laidig et al., "Reflectance of AlAs-GaAs . . . Superlattices", Journal of Applied Physics, 56(6) Sep. 15, 1984.

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