Light responsive field effect transistor having a pair of gate r

Details Light responsive field effect transistor having a pair of gate r Light responsive field effect transistor having a pair of gate r

1974-09-16

1976-10-12

Larkins, William D..

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

307311, 357 22, 357 30, 357 43, H03K 3353, H03K 342, H01L 2980, H01L 2714

Patent

active

039861953

ABSTRACT:
A semiconductor device includes a first semiconductive region of a first conductivity type, a second semiconductive region of a second conductivity type adjacent to the first semiconductive region, and a third semiconductive region of the first conductivity type adjacent to the second semiconductive region.
In the semiconductor device, the distance between the first semiconductive region and the third semiconductive region is smaller than the diffusion length of the minority carriers existing in the second semiconductive region. Thus, a photocurrent flowing through the second and third semiconductive regions is amplified by h.sub.FE times as much as the current of carriers of the conventional photo-diodes.

REFERENCES:
patent: 3340427 (1967-09-01), Bisso
patent: 3868718 (1975-02-01), Arai
patent: 3947761 (1976-03-01), Arai

Affiliated with

Also associated with

Rating

Light responsive field effect transistor having a pair of gate r does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light responsive field effect transistor having a pair of gate r, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light responsive field effect transistor having a pair of gate r will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-947142