Light-responsive field effect mode semiconductor devices

Details Light-responsive field effect mode semiconductor devices Light-responsive field effect mode semiconductor devices

1980-05-12

1982-04-20

Edlow, Martin H.

357 30, H01L 2980

Patent

active

043262104

ABSTRACT:
A field effect semiconductor device comprises a P-N junction with a depletion layer responsive to radiant energy for controllably enabling the field effect semiconductor device. The depletion layer occurs near at least a pair of gate locations within a silicon substrate. The gate locations are of P-type while the silicon substrate is of N-type. The depletion layer is rendered ineffective by photoelectromotive force derived from the radiant energy. A channel emerges according to the shrinkage of the depletion layer to thereby provide electrical connection between a source and drain electrodes of the field effect transistor.

REFERENCES:
patent: 3894295 (1975-07-01), Shannon
patent: 3931633 (1976-01-01), Shannon
patent: 4115793 (1978-09-01), Nishizawa

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