Light responsive avalanche diode

Details Light responsive avalanche diode Light responsive avalanche diode

1990-09-14

1991-10-15

Jackson, Jr., Jerome

357 13, 357 56, 357 68, 357 72, H01L 2990, H01L 2714, H01L 2944

Patent

active

050578928

ABSTRACT:
Large area semiconductor photodiodes are made free of microcracks by forming on the incident light surface of the device a ring-shaped electrode structure. The electrode structure adds rigidity to the device when the edge surface of the device is later bevelled, a process which creates microcracks normally.

REFERENCES:
patent: 3886579 (1975-05-01), Ohuchi et al.
patent: 4463368 (1984-07-01), McIntyre et al.
Gelezunas et al., Appl. Phys. Lett., vol. 30, No. 2, Jan. 15, 1977, pp. 118-120, "Uniform . . . Silicon".
Trommer et al., Siemans Forsch-u. Entwickl.-Ber. Bd. 11 (1982), Nr. 4, Springer Verlag, 1982, "InGaAs/InP . . . Range", pp. 216-220.
Zirngibl et al., Appl. Phys. Lett., vol. 54 (No. 21), May 22, 1989, pp. 2076-2078, "Characterization . . . Contact".
Licari, Plastic Coatings for Elect., McGraw Hill, 1970, New York, pp. 30, 33, 34, 99.

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