Light-receiving semiconductor device with plural buried layers

Details Light-receiving semiconductor device with plural buried layers Light-receiving semiconductor device with plural buried layers

1994-04-15

1995-11-14

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257446, 257465, 257464, 257443, H01L 2714, H01L 3100

Patent

active

054669626

ABSTRACT:
A light-receiving semiconductor device with improved light sensitivity. On a semiconductor substrate of a first conductivity type is formed a plurality of buried layers of a second conductivity type divided by a narrow dividing region. A surface semiconductor layer of the first conductivity type covers the buried layers and the substrate. A connecting semiconductor region of the second conductivity type extends from each of the plurality of the buried layers to the surface of the surface semiconductor layer. An anti-light-reflecting film formed on the surface of the surface semiconductor layer covers a region above the dividing region as well as above the plurality of buried layers. Each of the plurality of buried layers forms a light responsive element with the substrate.

REFERENCES:
patent: 4238760 (1980-12-01), Carr
patent: 4366377 (1982-12-01), Notthoff et al.
patent: 5162887 (1992-11-01), Dierschke
patent: 5177581 (1993-01-01), Kubo et al.

Affiliated with

Also associated with

Rating

Light-receiving semiconductor device with plural buried layers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light-receiving semiconductor device with plural buried layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light-receiving semiconductor device with plural buried layers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1223143