Light receiving PN junction semiconductor device with silicon ni

Details Light receiving PN junction semiconductor device with silicon ni Light receiving PN junction semiconductor device with silicon ni

1991-11-12

1993-01-05

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257461, 257446, 257443, H01L 2714

Patent

active

051775816

ABSTRACT:
A light receiving semiconductor device includes a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the substrate, isolation regions of the first conductivity type for separating the second conductivity type semiconductor layer into a plurality of islands, at least one of the second conductivity type islands and the first conductivity type substrate constituting a light receiving element, an anti-reflection film covering at least the entire surface of the island of the light receiving element, and a first conductivity type layer formed between the anti-reflection film and the second conductivity type island and extending to the first conductivity type isolation region surrounding the island of the light receiving element.

REFERENCES:
patent: 4660065 (1987-04-01), Carvajal et al.
patent: 4774557 (1988-09-01), Kosonocky
patent: 4831430 (1989-05-01), Umeji
Noguchi et al., "Preamplifier IC with Photodetectors for Optical Pickup", The Institute of Electronics and Communication.
Engineers of Japan, vol. 86, No. 241, pp. 75-88.

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