Light receiving element, light detector with built-in...

Details Light receiving element, light detector with built-in... Light receiving element, light detector with built-in...

2005-09-27

2005-09-27

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S233000, C257S292000, C257S461000, C257S464000, C438S048000, C438S087000

Reexamination Certificate

active

06949809

ABSTRACT:
A light receiving element, comprising a semiconductor structure comprising at least a first conductivity type semiconductor layer, a first, second conductivity type semiconductor layer provided on the first conductivity type semiconductor layer in the semiconductor structure, a second, second conductivity type semiconductor layer having an impurity concentration lower than that of the first, second conductivity type semiconductor layer, a second, first conductivity type semiconductor layer provided on the second, second conductivity type semiconductor layer, or a second, first conductivity type semiconductor layer provided within the second, second conductivity type semiconductor layer.

REFERENCES:
patent: 4586068 (1986-04-01), Petroff et al.
patent: 6583482 (2003-06-01), Pauchard et al.
patent: 2004/0065911 (2004-04-01), Lixin

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