Light-receiving element and photodetector using the same

Details Light-receiving element and photodetector using the same Light-receiving element and photodetector using the same

2008-05-13

2008-05-13

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

Reexamination Certificate

active

07372124

ABSTRACT:
A light-receiving element may easily detect the barycenter of a light intensity of light having a long-wavelength band in an optical communication. An InGaAs layer (i-type layer) and a p-type InP layer are stacked on an n-type InP substrate. Electrodes are formed on both sides of the top surface of the p-type layer, and an electrode is formed on the bottom surface of the n-type substrate. An incident light impinged upon the light-receiving element is photoelectricly-converged into a photocurrent, and the photocurrent flows in the p-type layer to the electrodes. As a result, a current is derived from each of the electrodes, the magnitude thereof being dependent on the distances from the light impinging position to respective electrodes. The barycenter of a light intensity may be calculated from the currents derived from the electrodes and a light intensity may be obtained from the summation of the currents.

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