Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2011-03-29
2011-03-29
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S219000, C257S252000, C257S290000, C257SE31063
Reexamination Certificate
active
07915648
ABSTRACT:
A light-receiving element includes: a first-conductivity-type semiconductor region configured to be formed over an element formation surface; a second-conductivity-type semiconductor region configured to be formed over the element formation surface; an intermediate semiconductor region configured to be formed over the element formation surface between the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region, and have an impurity concentration lower than impurity concentrations of the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region. The light-receiving element further includes: a first electrode configured to be electrically connected to the first-conductivity-type semiconductor region; a second electrode configured to be electrically connected to the second-conductivity-type semiconductor region; and a control electrode configured to be formed in an opposed area that exists on the element formation surface.
REFERENCES:
patent: 7164164 (2007-01-01), Nakamura et al.
patent: 7692261 (2010-04-01), Hara et al.
patent: 2007/0228421 (2007-10-01), Shioya et al.
patent: 2004-119719 (2004-04-01), None
Ikeda Masanobu
Ito Ryoichi
Kunii Masafumi
Otani Natsuki
Tanaka Tsutomu
Louie Wai-Sing
SNR Denton US LLP
Sony Corporation
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