Light receiving device with isolation regions

Details Light receiving device with isolation regions Light receiving device with isolation regions

1995-06-02

1997-02-11

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257446, 257448, 257465, H01L 3100

Patent

active

056024150

ABSTRACT:
A light receiving device including a semiconductor substrate of a first conductivity type; a first semiconductor layer of a second conductivity type which is formed on the semiconductor substrate of the first conductivity type; and a semiconductor layer of the first conductivity type which elongates from a surface of the first semiconductor substrate of the second conductivity type to reach a surface of the semiconductor substrate of the first conductivity type, the semiconductor layer splitting the first semiconductor layer of the second conductivity type into a plurality of semiconductor regions of the second conductivity type. The portion of the semiconductor layer of the first conductivity type which overlaps with the semiconductor substrate of the first conductivity type is formed as a semiconductor region of the first conductivity type and has a high-impurity density. The semiconductor regions of the second conductivity type, and semiconductor substrate of the first conductivity type below such regions form a plurality of light detecting photodiode portions for detecting signal light. The device further includes a second semiconductor layer of the second conductivity type being buried in a part of the semiconductor substrate of the first conductivity type which constitutes each of the light detecting photodiode portions.

REFERENCES:
patent: 3858233 (1974-12-01), Miyata et al.
patent: 4837429 (1989-06-01), Umezawa et al.
patent: 4996578 (1991-02-01), Motojima et al.
patent: 5177581 (1993-01-01), Kubo et al.
patent: 5283460 (1994-02-01), Mita
patent: 5466962 (1995-11-01), Yamamoto et al.

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