Light-receiving device

Details Light-receiving device Light-receiving device

2008-07-18

2011-11-15

Toledo, Fernando L (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257SE31032

Reexamination Certificate

active

08058642

ABSTRACT:
A light-receiving element device capable of receiving near infrared to mid-infrared light of 1.7 μm-3.5 μm is provided. A substrate is formed of InP, and a superlattice light-receiving layer is formed of a superlattice of a type 2 junction formed by alternately being stacked a falling layer of a Group III-V compound semiconductor including In, Ga, As, N and a rising layer of a Group III-V compound semiconductor including Ga, As, Sb. The film thickness of the falling layer and the rising layer is each 3 nm-10 nm. The entire thickness of the superlattice light-receiving layer is 2 μm-7 μm. The lattice mismatch of the constituent film of the superlattice light-receiving layer to InP is ±0.2% or less.

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