Light-receiving device

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

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Details

257437, H01L 310203, H01L 310232

Patent

active

061147370

ABSTRACT:
There is disclosed a light-receiving device comprising an absorption layer formed of a semiconductor material which is capable of generating electric charges in response to an incident light, a plurality of light-detecting regions formed in the absorption layer, each outputting an electric signal in response to an incident light signal, and a depletion region formed between the adjacent light-detecting regions for collecting electric charges generated in a portion of the absorption layer between the adjacent light-detecting regions.

REFERENCES:
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patent: 4044373 (1977-08-01), Nomiya et al.
Kaede, et al, "12-Channel Parallel Optical-Fiber Transmission Using A Low-Drive Current 1.3.mu.m LED Array and a p-i-n PD Array", Journal Of Lightwave Technology, vol. 8, No. 6, Jun. 1990, pp. 883-888.
Ota, et al, "Twelve-Channel Individually Addressable InGaAs/InP p-i-n Photodiode and InGaAsP/InP LED Arrays in a Compact Package", Jounal Of Lightwave Technology, vol. LT-5, No. 8, Aug., 1987, pp. 1118-1122.
S.R. Forrest, "Monolithic Optoelectronic Integration: A New Component Technology for Lightwave Communications", IEEE Transactions Of Electron Devices, vol. ED-32, No. 12, Dec., 1985, pp. 2640-2655.
S.R. Forrest, Member, IEEE, "Monolithic Optoelectronic Integration: A New Component Technology for Lightwave Communications", 8217 Jounal Of Lightwave Technology LT-3 (1985) Dec., No. 6, pp. 1248-1263, IEEE Transactions On Electron Devices, vol. ED-32, pp. 2640-2655.

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