Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1991-12-16
1995-02-21
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257461, 257615, 257632, 257656, H01L 2714, H01L 29167, H01L 2348, H01L 29161
Patent
active
053919106
ABSTRACT:
A light absorbing layer, and a window layer formed thereon constitutes a first conduction-type semiconductor layer. In a part of this first conduction-type semiconductor layer there is provided a second conduction-type region extending to the light absorbing layer through the window layer. A part of the window layer around the second conduction region is selectively removed. Consequently even when light intended to enter a light detecting region is incident outside of the light detecting region, most of the carriers generated there are recombined at a surface level of the light absorbing layer before diffusing in a depletion layer. This light detecting device therefor does not substantially detect sensitivity to light incident outside the light detecting region.
REFERENCES:
patent: 4980315 (1990-12-01), Einthoven et al.
patent: 5144396 (1992-09-01), Sargood
Y. Akahori, et al, "A Monolithic InP/InGaAs PIN-FET Receiver", Japan Telecommunication Review, vol. 1, No. 4, Nov. 1989, Tokyo JP, pp. 97-102.
Patent Abstracts of Japan, vol. 13, No. 307 (E-787) 13 Jul. 1989 & JPA-1 082,678 (NEC Corp.) 28 Mar. 1989.
Ishimura, et al, "Dark Current and Diffusion Length In InGaAs Photodiodes Grown on GaAs Substrates", Applied Physics Letters, vol. 56, No. 7, 12 Feb. 1990, New York, U.S. pp. 644-646.
Wang et al, "A Front-Side Illuminated InP/GaInAs/InP p-i-n Photodiode with A-3dB Bandwith in Excess of 18 Ghz", IEEE Transactions on Electron Devices, vol. Ed-34, No. 4 Apr. 1987, New York, U.S., pp. 938-940.
Fujimura Yasushi
Okuda Hiroshi
Tonai Ichiro
Prenty Mark V.
Sumitomo Electric Industries Ltd.
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