Light quenchable thyristor device

Details Light quenchable thyristor device Light quenchable thyristor device

1988-10-14

1991-05-21

Hille, Rolf

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 22, 357 30, 357 39, 307631, H01L 2974

Patent

active

050179918

ABSTRACT:
A thyristor device comprising an SI (Static induction) thyristor or beam base thyristor and an SIT (static induction transistor) or SIT-mode bipolar transistor connected to the gate of the thyristor in order to make it possible to turn-on and-off a direct current and voltage at a high speed with a light. In the thyristor part, the SIT gate structure or SIT-mode beam base structure exists in the first gate or base region or second gate or base region so that, at the time of the triggering operation, a very high switching efficiency will be obtained.

REFERENCES:
patent: 3708672 (1973-01-01), Marinkovic
patent: 4354121 (1982-10-01), Terasawa et al.
patent: 4608587 (1986-08-01), Nishizawa
International Electron devices meeting, San Francisco, Dec. 9-12, 1984, pp. 435-438, IEDM; J.. Nishizawa et al.: "A very high sensitivity and very high speed light triggered and light quenched static induction thyristor (LTQSITHY)".
Japanese Journal of Applied Physics, supplements 16th int. conf. solid state devices and materials, Kobe, Aug. 30-Sep. 14, 1984, pp. 321-324, Tokyo, Jp; J. Nishizawa et al: "Totally light controlled thyristor-optically triggerable and optically quenchable static induction photo-thyristor".
International Electron Devices Meeting, San Francisco, Dec. 13-15, 1982, pp. 261-263, IEE; L. Leipold et al: "600V/5A FET-triggered lateral opto-triac".
Japanese Journal of Applied Physics vol. 16, supplement 16-1, Proceedings of the 18th Conference on solid state devices, 1976, pp. 541-544, Tokyo, Jp.; J. Nishizawa et al.: "Characteristics of new thyristors".
"Fabrication and Optical-Switching Results on the Integrated Light-Triggered and Quenched Static Induction Thyristor" IEEE Transactions on Electron Devices, vol. ED-33, No. 12 Dec. 1986, Jun-Ichi Nishizawa, Fellow, IEEE, Takashige Tamamushi, Member, IEEE, Ken-Ichi Nonak & Hiraku Watanabe pp. 2031-2040.
"Fabrication and Optical-Switching Results of the Double-Gate Static-Induction Thyristor with the First Planar-Gate and the Second Buried-Gate Structure" IEEE Electron Device Letters, vol. EDL-7, No. 3, Mar. 1986, J. I. Nishizawa, Fellow, IEEE, T. Tamamushi, Member IEEE K. Nonaka & S. Shimomura pp. 175-178.
"A Double-Gate-Type Static-Induction Thyristor" IEEE Trans. on Electron Devices vol. ED34, No. 6 6/87 J. I. Nishizawa et al. pp. 1396-1406.
"Current Amplication in nonhomogeneous-base structure and Static Induction Transistor Structure", J. I. Nishizawa and K. I. Nonaka, pp.4783-4797.
"A Very High Sensitivity and High Speed Light Triggered and Light Quenched Static Induction Thyristor (LTQSITHY)", J. Nishizawa, T. Tamamushi & K. Nonaka, pp. 435-437.
"New Thyristor Applicable to DC Power Transmission", J. Nishizawa & T. Tamamushi, pp. 304-309.
"Functional Integration of the Light-Triggered Static Induction Thyristor and the Static Induction Phototransistor", J. Nishizawa, Fellow, IEEE. T. Tamamushi, Member, IEEE, and K. Nonaka, pp. 265-267.
Roggwiler, Totally Light Controlled Switch 1980 IEDM Conf. Proc., pp. 646-648.

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