Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2007-04-10
2007-04-10
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S029000, C257S040000
Reexamination Certificate
active
10986080
ABSTRACT:
There are provided a light polarizing film of a grid type, usable for light at a wavelength in a range of a visible light region to an infrared region, a method of continuously fabricating the same, and a reflective optical film using the light polarizing film. A polypropylene film is passed through rolls12, a first constant temperature cell13, and rolls12′to thereby undergo uniaxial drawing by 4-fold. Thereafter, an aluminum metal is vapor-deposited to a thickness of 100 nm in a vacuum deposition cell14to be subsequently passed through rolls15, a second constant temperature cell16, and rolls15′, undergoing uniaxial drawing by 2-fold again while partially crystallizing the polypropylene film. At this point in time, the aluminum metal undergoes substantially uniform cracking in a direction orthogonal to a drawing direction. Thereafter, heat treatment is applied to the film in a third constant temperature cell17, and the film is subsequently taken out by take-up rolls18. The film-like light polarizing film obtained had a degree of polarization at 99.5%, and light transmittance at 90%, in a region of infrared wavelength in a range of 1 to 10 μm. With two sheets of the films crossed at right angles, reflectance thereof for infrared rays was measured and was found at not less than 99.9%.
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Armstrong Kratz Quintos Hanson & Brooks, LLP
Dang Phuc T.
Koei Shoji Limited Company
Siezo Miyata
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