Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1990-10-12
1992-03-17
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
2504921, G21K 500
Patent
active
050971379
ABSTRACT:
A method of forming a resist pattern on a main surface of a semiconductor substrate comprising the steps of exposing a resist to light and developing it to become a predetermined pattern, curing the surface of the resist pattern formed by the exposing and developing treatments by irradiating the surface with far ultraviolet rays having a short wavelength, and baking the resist pattern subjected to a light irradiation treatment. The light irradiation treatment is performed by irradiating the surface of the resist pattern, which is not shaded from light with the far ultraviolet rays, in a state in which a resist pattern region formed on a peripheral portion of the semiconductor substrate is shaded from light. As a result, a crack can be prevented from forming on the resist of the peripheral portion of the semiconductor substrate. A light irradiation apparatus used in the light irradiation treatment comprises shading means for selectively intercepting the irradiation light. The shading means prevent light irradiation onto the resist pattern of the peripheral portion of the semiconductor substrate.
REFERENCES:
patent: 4023904 (1977-05-01), Sheets
patent: 4814244 (1989-03-01), Koguchi et al.
patent: 4826756 (1989-05-01), Orvek
R. Allen, "Deep U.V. Hardening of Positive Photoresist Patterns", Journal of the Electrochemical Society (Jun. 1982), pp. 1379-1381.
Berman Jack I.
Mitsubishi Denki & Kabushiki Kaisha
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