Electric heating – Heating devices – Combined with container – enclosure – or support for material...
Reexamination Certificate
1999-11-12
2001-05-29
Walberg, Teresa (Department: 3742)
Electric heating
Heating devices
Combined with container, enclosure, or support for material...
C219S390000, C392S416000, C118S724000
Reexamination Certificate
active
06239413
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a light irradiation annealing apparatus called a Ramp annealing apparatus or a rapid thermal annealing (RTA) apparatus for annealing semiconductor wafers.
2. Description of the Related Art
Generally, in a prior art Ramp annealing apparatus, an annealing chamber is in a vacuum state, so that semiconductor wafers are heated only by radiation of a lamp heater. This will be explained later in detail.
In the above-described prior art Ramp annealing apparatus, however, since the temperature of the semiconductor wafer depends upon the resistivity, if the temperature of the semiconductor wafer is controlled by the power of the lamp heater, the power condition of the apparatus has to be adjusted to conform with the resistivity of the semiconductor wafer, which would increase the manufacturing cost.
Note that, if the temperature of the semiconductor wafer is monitored by a pyrometer or a thermocouple, the power of the lamp heater can be controlled based on the monitored temperature.
SUMMARY OF THE INVENTION
It is an object of the present invention to provide an light irradiation (Ramp) annealing apparatus which does not need to set conditions for different resistivities of semiconductor wafers.
According to the present invention, in a light radiation annealing apparatus for annealing a semiconductor wafer, an infrared radiation cut filter is inserted between a lamp heater and the semiconductor wafer to cut an infrared component of light emitted from the lamp heater. Thus, the semiconductor wafer is annealed by the light irradiation apparatus to an approximate temperature irrespective of the resistivity of the semiconductor wafer.
REFERENCES:
patent: 4806321 (1989-02-01), Nishizawa et al.
patent: 5156820 (1992-10-01), Wong et al.
patent: 5534069 (1996-07-01), Kuwabara et al.
patent: 58-97837 (1983-06-01), None
patent: 61-75517 (1986-04-01), None
patent: 62-82730 (1987-05-01), None
patent: 2-275622 (1990-11-01), None
patent: 3-266424 (1991-11-01), None
Fuqua Shawntina
NEC Corporation
Walberg Teresa
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